Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

SC-100, SOT-669

Number of Pins  

4

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.2V @ 1mA

Current - Continuous Drain (Id) @ 25℃  

61A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

43W Tc

Published  

2016

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

Additional Feature  

HIGH RELIABILITY

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Reference Standard  

IEC-60134

JESD-30 Code  

R-PSSO-G4

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.75m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

705pF @ 12V

Gate Charge (Qg) (Max) @ Vgs  

10.5nC @ 10V

Drain to Source Voltage (Vdss)  

25V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

61A

JEDEC-95 Code  

MO-235

Drain-source On Resistance-Max  

0.00675Ohm

Pulsed Drain Current-Max (IDM)  

244A

DS Breakdown Voltage-Min  

25V

Avalanche Energy Rating (Eas)  

50.9 mJ

FET Feature  

Schottky Diode (Body)

RoHS Status  

ROHS3 Compliant